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APT50M75JLLU2
APT50M75JLLU2
500V 51A 0.075W
S G D K
POWER MOS 7TM
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
SO
ISOTOP(R)
2 T-
27
"UL Recognized"
D G S
* Increased Power Dissipation * Easier To Drive * PFC "Boost" Configuration
K
All Ratings: TC = 25C unless otherwise specified.
APT50M75JLLU2 UNIT Volts Amps
Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
Gate-Source Voltage Continuous Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25C Linear Derating Factor
Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
AL IC HN EC ION TT CE MA AN OR DV NF A I
(Repetitive and Non-Repetitive)
1 4
500 51 204
30 40 465
Volts Watts W/C C Amps mJ
3.72 300 51 50
-55 to 150
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250A) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
500 51 0.075 100 500 3 5 100
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms A nA Volts
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA EUROPE
405 S.W. Columbia Street Chemin de Magret
Bend, Oregon 97702-1035 F-33700 Merignac - France
Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
050-7095 Rev - 10-2001
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT50M75JLLU2
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V MIN TYP MAX UNIT
5800 1200 90 145 38 66 17 14 38 5
nC pF
Gate-Source Charge
Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time
Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr
dv/ dt
Characteristic / Test Conditions
Continuous Source Current (Body Diode) Pulsed Source Current
1
Diode Forward Voltage
AL IC HN EC ION TT CE MA AN OR DV NF A I
VDD = 0.5 VDSS ID = ID[Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode)
2
ns
MAX
UNIT Amps Volts ns C
51 204 1.3
(VGS = 0V, IS = -ID[Cont.])
Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/s) Peak Diode Recovery
dv/ dt 5
620 14.7 8
V/ns
THERMAL CHARACTERISTICS
Symbol RqJC RqJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.27 40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 1.92mH, R = 25W, Peak I = 51A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID Cont. di/dt 700A/s VR VDSS TJ 150C [ ] APT Reserves the right to change, without notice, the specifications and information contained herein.
0.3 , THERMAL IMPEDANCE (C/W) D=0.5 0.1 0.2 0.05 0.1 0.05
PDM
050-7095 Rev - 10-2001
0.01 0.005
Note: 0.02 0.01 SINGLE PULSE
t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
Z 0.001 10-5
qJC
10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10-4
APT50M75JLLU2
Diode Specifications Section
All Ratings: TC = 25C unless otherwise specified.
APT50M75JLLU2 UNIT
MAXIMUM RATINGS (UltraFast Recovery Diode)
Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM TJ,TSTG TL Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (TC = 80C, Duty Cycle = 0.5) RMS Forward Current
Non-Repetitive Forward Surge Current (TJ = 45C, 8.3mS) Operating and StorageTemperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
VF
Maximum Forward Voltage
AL IC HN EC ION TT CE MA AN OR DV NF A I
30 60 320 300
MIN TYP IF = 30A IF = 60A
600
Volts
Amps
-55 to 150
C
MAX
UNIT
1.8
Volts
1.5
IF = 30A, TJ = 150C IRM CT Maximum Reverse Leakage Current VR = VR Rated VR = VR Rated, TJ = 125C Junction Capacitance, VR = 200V
1.6 250
A
500 40
pF
050-7095 Rev - 10-2001
APT50M75JLLU2 DYNAMIC CHARACTERISTICS
Symbol trr1 trr2 trr3 tfr1 tfr2 IRRM1 IRRM2 Qrr1 Qrr2 Vfr1 Vfr2 diM/dt Characteristic Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/S, VR = 30V, TJ = 25C Reverse Recovery Time TJ = 25C MIN TYP MAX UNIT
50 50 80
65
IF = 30A, diF /dt = -240A/S, VR = 350V Forward Recovery Time
IF = 30A, diF /dt = 240A/S, VR = 350V Reverse Recovery Current
IF = 30A, diF /dt = -240A/S, VR = 350V Recovery Charge
IF = 30A, diF /dt = -240A/S, VR = 350V Forward Recovery Voltage
IF = 30A, diF /dt = 240A/S, VR = 350V Rate of Fall of Recovery Current
IF = 30A, diF /dt = -240A/S, VR = 350V (See Figure 10)
AL IC HN EC ION TT CE MA AN OR DV NF A I
TJ = 100C TJ = 25C
nS
155 155 4
TJ = 100C TJ = 25C
10
Amps
TJ = 100C TJ = 25C
7.5
15
nC
100 300 5 5
TJ = 100C TJ = 25C
Volts
TJ = 100C TJ = 25C
400 200
A/S
TJ = 100C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RqJC RqJA WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance MIN TYP MAX UNIT C/W
0.90 20 1.06
oz. gm.
Package Weight
30
2.0
1.0
D=0.5
, THERMAL IMPEDANCE (C/W)
0.5 0.2
0.1 0.1 0.05
0.05
0.02 Note:
PDM
qJC
0.01 SINGLE PULSE 0.01
050-7095 Rev - 10-2001
Z
t1 t2
Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
0.005 -5 10
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 14, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10-4
10
APT50M75JLLU2
100 Qrr, REVERSE RECOVERY CHARGE (nano-COULOMBS) 1600
TJ = 100C VR = 350V
IF, FORWARD CURRENT (AMPERES)
80 TJ = 150C 60 TJ = 100C 40
1200 60A 800 30A 400
TJ = 25C TJ = -55C
20
0 0.5 1.0 1.5 2.0 2.5 VF, ANODE-TO-CATHODE VOLTAGE (VOLTS) Figure 15, Forward Voltage Drop vs Forward Current 40 IRRM, REVERSE RECOVERY CURRENT (AMPERES)
TJ = 100C VR = 350V
0
30
20
10
AL IC HN EC ION TT CE MA AN OR DV NF A I
0 2.0 Kf, DYNAMIC PARAMETERS (NORMALIZED) 60A 1.6 trr 1.2 30A 15A trr 0.8 IRRM 0.4 Qrr 0.0 -50 2500 tfr, FORWARD RECOVERY TIME (nano-SECONDS)
TJ = 100C VR = 350V IF = 30A
15A
10 50 100 500 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 16, Reverse Recovery Charge vs Current Slew Rate
Qrr
0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 17, Reverse Recovery Current vs Current Slew Rate 200
TJ = 100C VR = 350V
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 18, Dynamic Parameters vs Junction Temperature 25 Vfr, FORWARD RECOVERY VOLTAGE (VOLTS)
trr, REVERSE RECOVERY TIME (nano-SECONDS)
160 60A 120 30A 15A 80
2000 Vfr
20
1500
15
1000
10
40
500 tfr
5
0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 19, Reverse Recovery Time vs Current Slew Rate 800 500 CJ, JUNCTION CAPACITANCE (pico-FARADS)
0 0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 20, Forward Recovery Voltage/Time vs Current Slew Rate
100 050-7095 Rev - 10-2001
50 30 0.01
0.05
0.1
0.5 1 5 VR, REVERSE VOLTAGE (VOLTS)
10
50
100
200
Figure 21, Junction Capacitance vs Reverse Voltage
Vr
APT50M75JLLU2
D.U.T. 30H
trr/Qrr Waveform
+15v diF /dt Adjust 0v -15v
1 2 3 4
IF - Forward Conduction Current
diF /dt - Current Slew Rate, Rate of Forward Current Change Through Zero Crossing. IRRM - Peak Reverse Recovery Current.
trr - Reverse Recovery Time Measured from Point of IF
Current Falling Through Zero to a Tangent Line { 6 diM/dt} Extrapolated Through Zero Defined by 0.75 and 0.50 IRRM.
AL IC HN EC ION E T AT NC RM VA FO AD IN
Figure 22, Diode Reverse Recovery Test Circuit and Waveforms
PEARSON 411 CURRENT TRANSFORMER
1
4
6
Zero
5
3
0.5 IRRM
0.75 IRRM
2
5 6
Qrr - Area Under the Curve Defined by IRRM and trr. diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr.
Figure 23, Diode Reverse Recovery Waveform and Definitions
Qrr = 1/2 (trr . IRRM)
SOT-227 (ISOTOP(R)) Package Outline
11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 050-7095 Rev - 10-2001 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
Cathode
Drain Changed 2/10/99
Source Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson. APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474
Gate
"UL Recognized" File No. E145592
5,019,522 5,434,095 5,262,336 5,528,058

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